PART |
Description |
Maker |
DA28F320J5-120 DT28F320J5A-120 DA28F640J5A-150 DA2 |
EEPROM|FLASH|2MX16/4MX8|CMOS|SOP|56PIN|PLASTIC 5 Volt Intel StrataFlash? Memory 5 Volt Intel StrataFlash庐 Memory
|
Intel Corporation
|
TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
|
NUMONYX Intel Corporation
|
GT28F320W18BD80 GT28F320W18TC80 GT28F320W18TD60 GT |
Intel㈢ Wireless Flash Memory
|
INTEL[Intel Corporation]
|
GE28F640L30B85 GE28F640L30T85 GE28F256L30B85 |
1.8 Volt Intel StrataFlash??Wireless Memory with 3.0-Volt I/O (L30)
|
INTEL CORP
|
RD28F3208C3T70 RD28F3208C3B90 |
TVS BIDIRECT 400W 90V SMA 3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye SPECIALTY MEMORY CIRCUIT, PBGA66
|
INTEL CORP Intel, Corp.
|
PF48F4400M0Y0B0 |
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
|
Numonyx B.V
|
313272-06 PF38F5070M0Y0B0 |
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
|
Numonyx B.V
|
BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT High-speed diode
|
Won-Top Electronics Co., Ltd. Philips Semiconductors NXP Semiconductors
|
RD38F1010C0ZTL0 RD38F1020C0ZTL0 RD28F1602C3T110 RD |
3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
|
INTEL[Intel Corporation]
|
AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|